Uniroyal combines the latest quaternary and ternary compounds, with multiple quantum well (MQW) semiconductor technology, to provide the brightest multicandela class LEDs available. For the best in Visible and UV LED results, choose Uniroyal for “The Light Inside”™ your LED-based product. Uniroyal is your one-stop shop for Epitaxial Wafers, Package Ready Die (PRD)™, and custom LED semiconductors.
POWERBR(ite)™
AllnGaP EPITAXIAL WAFER TECHNOLOGY


FEATURES AND BENEFITS

  • MULTIPLE QUANTUM WELL STRUCTURE
  • HIGH REFLECTIVITY EMBEDDED DISTRIBUTIVE BRAGG REFLECTOR
  • EXCELLENT WAVELENGTH AND BRIGHTNESS UNIFORMITY
  • NARROW SPECTRAL BANDWIDTH, SUPERIOR UNIFORMITY
  • OUTSTANDING PERFORMANCE OVER TEMPERATURE

WAFER CHARACTERISTICS

  • WAFER DIAMETER: 76.2mm ±
  • WAFER THICKNESS: 375 ±25 microns (Unthinned)
  • WAFER SUBSTRATE: GaAs (n-Type)
  • EPITAXIAL TOP LAYER: GaP

Electro-Optical Characteristics @ 25° C, 20 mA DC
Parameter UAEP3590- UAEP3618-
-0B2 -0G2 -0K2 -0B2 -0G2 -0K2
Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Luminous Intensity                   90   100 100   150 180   190
Dominant Wavelength   TBA 613 618 623 613 618 623 613 618 623
Peak Wavelength     625     625     625  
Spectral Width (FWHM)     18     18     18  
Forward Voltage                   2.0   2.4 2.0   2.4 2.0   2.4

Electro-Optical Characteristics @ 25° C, 20 mA DC
Parameter UAEP3626- UAEP3650-
-0B2 -0G2 -0K2 -0D2 -0G2 -0L2
Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Luminous Intensity 90   120 100   150 180   190 25   40 40   55 55   70
Dominant Wavelength 621 626 031 621 626 631 613 618 623 640 650 660 640 650 660 640 650 660
Peak Wavelength   633     633     625     657     657     657  
Spectral Width (FWHM)   18     18     18     18     18     18  
Forward Voltage 2.0   2.4 2.0   2.4 2.0   2.4 2.0   2.4 2.0   2.4 2.0   2.4
    n/a     n/a     n/a     1.0     1.6     2.6  

NOTES:
1. Electro-Optical Characteristics are measured using die from other EPI wafers in the same lot mounted on TO-46 headers however, as fabrication conditions will influence the final performance of the LED, the electrical and optical characteristics of chips and bare die manufactured from UOE wafers is not guaranteed.
2. Optical power is measured with die on TO-46 headers using an integrating sphere. An index matching encapsulent is not used.
3. A tolerance of ± 15% on brightness level, and ± 2 nm on chromaticity, due to measuring variations applies.
4.Typical values are provided for information only but are within the range of average values of acceptable sample sizes.
5. Maximum ratings are package dependent. The forward currents are not limited by the die but by the effect of the package.
6. Forward voltage can be affected by the metals technology used in the fabrication of the die.
7. Design and construction on the junction temperature of the LED.7) Forward voltage can be affected by the metals technology used in the fabrication of the die.
8. The Electro-Optical characteristics are based on a typical die dimension of 0.012 X 0.012 X 0.0015 with a 100 um contact diameter. 10) The Dominant wavelength measurement is calculated from the 1931 2° CIE Chromaticity Diagram.

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